Characterization of lattice-matched single In1-xGaxAsyP1-y quantum wells grown by conventional liquid phase epitaxy
In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88Ga0.12As0.26 p0.74 (lambda(g) = 1.05 mum). Low-temperature photoluminescence was employed to prove the samples capable of displaying quantum size effects. Energy upshifts up to 125 meV were measured for InP-clad quantum wells of about 50 angstrom thickness. All multilayered stacks originate from step-cooling growth cycles in an ordinary linear slider boat. Streamlining of the experimental conditions has led to a conspicuous decrease in the FWHM values of the blueshift signals.
WOS:A1994PA82700020
1994
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8
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Univ leipzig,fac phys,d-04103 leipzig,germany. swiss fed inst technol,ph ecublens,inst appl phys,ch-1015 lausanne,switzerland. Behcer, s, univ leipzig,fac chem & mineral,linnestr 3,d-04103 leipzig,germany.
ISI Document Delivery No.: PA827
Cited Reference Count: 17
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