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  4. High-Stable-Efficiency Tandem Thin-Film Silicon Solar Cell With Low-Refractive-Index Silicon-Oxide Interlayer
 
research article

High-Stable-Efficiency Tandem Thin-Film Silicon Solar Cell With Low-Refractive-Index Silicon-Oxide Interlayer

Boccard, Mathieu  
•
Despeisse, Matthieu  
•
Escarre, Jordi
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2014
Ieee Journal Of Photovoltaics

We report the recent advances and key requirements for high-efficiency "micromorph" tandem thin-film silicon solar cells composed of an amorphous silicon top cell and a microcrystalline silicon bottom cell. The impact of inserting a low-refractive-index silicon-oxide (SiOx) film as intermediate reflecting layer (IRL) is highlighted. We show that refractive indexes as low as 1.75 can be obtained for layers still conducting enough to be implemented in solar cells, and without no additional degradation. This allows for high top-cell current densities with thin top cells, enabling low degradation rates. A micromorph cell with a certified efficiency of 12.63% (short-circuit current density of 12.8 mA/cm(2)) is obtained for an optimized stack. Furthermore, short-circuit current densities as high as 15.9 mA/cm(2) are reported in the amorphous silicon top-cell of micromorph devices by combining a 150-nm- thick SiOx-based IRL and a textured antireflecting coating at the air-glass interface.

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Type
research article
DOI
10.1109/Jphotov.2014.2357495
Web of Science ID

WOS:000344542900009

Author(s)
Boccard, Mathieu  
Despeisse, Matthieu  
Escarre, Jordi
Niquille, Xavier
Bugnon, Gregory
Haenni, Simon
Bonnet-Eymard, Maximilien
Meillaud, Fanny
Ballif, Christophe  
Date Issued

2014

Publisher

Ieee-Inst Electrical Electronics Engineers Inc

Published in
Ieee Journal Of Photovoltaics
Volume

4

Issue

6

Start page

1368

End page

1373

Subjects

Current matching

•

SiOx-based intermediate reflector

•

tandem devices

•

thin-film silicon solar cells

Note

IMT-NE Number : 778

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
PV-LAB  
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/109754
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