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research article

Low-temperature thin-film indium bonding for reliable wafer-level hermetic MEMS packaging

Straessle, R.
•
Petremand, Y.  
•
Briand, D.  
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2013
Journal Of Micromechanics And Microengineering

This paper reports on low-temperature and hermetic thin-film indium bonding for wafer-level encapsulation and packaging of delicate and temperature sensitive devices. This indium-bonding technology enables bonding of surface materials commonly used in MEMS technology. The temperature is kept below 140 degrees C for all process steps and no surface treatment is applied before and during bonding. This bonding technology allows hermetic sealing at 140 degrees C with a leak rate below 4 x 10(-12) mbar l s(-1) at room temperature. The tensile strength of the bonds up to 25 MPa goes along with a very high yield.

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Type
research article
DOI
10.1088/0960-1317/23/7/075007
Web of Science ID

WOS:000321063300016

Author(s)
Straessle, R.
•
Petremand, Y.  
•
Briand, D.  
•
Dadras, M.
•
de Rooij, N. F.  
Date Issued

2013

Publisher

Institute of Physics

Published in
Journal Of Micromechanics And Microengineering
Volume

23

Issue

7

Article Number

075007

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
SAMLAB  
Available on Infoscience
October 1, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/95796
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