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  4. Utilizing electromagnetically induced transparency in InAs quantum dots for all-optical transistor design
 
research article

Utilizing electromagnetically induced transparency in InAs quantum dots for all-optical transistor design

Sabet, Rana Asgari
•
Sahrai, Mostafa
•
Sattari, Hamed  
2017
Applied Optics

We propose a multilayer medium with semiconductor quantum dot nano-structures as a defect layer for all-optical control of the 1.55 mu m probe beam. The effect of the coupling field and incoherent pump on absorption and dispersion properties of the quantum dot defect layer is investigated. Depending on the intensity of the coupling field and rate of the incoherent pump field, the possibility of the absorption cancellation and even amplification are demonstrated. The optimum values of the coupling field intensity and incoherent pump field for complete transmission or amplification are obtained. The dynamical behavior of the structure is investigated, and the estimated switching time scales are about tens of picoseconds. (C) 2017 Optical Society of America

  • Details
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Type
research article
DOI
10.1364/Ao.56.007944
Web of Science ID

WOS:000412053200023

Author(s)
Sabet, Rana Asgari
Sahrai, Mostafa
Sattari, Hamed  
Date Issued

2017

Publisher

Optical Soc Amer

Published in
Applied Optics
Volume

56

Issue

28

Start page

7944

End page

7951

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
IMT  
Available on Infoscience
November 8, 2017
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/142027
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