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  4. Low strain sensitivity of the dielectric property of pyrochlore Bi-Zn-Nb-O films
 
research article

Low strain sensitivity of the dielectric property of pyrochlore Bi-Zn-Nb-O films

Funakubo, Hiroshi
•
Okaura, Shingo
•
Suzuki, Muneyasu
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2008
Applied Physics Letters

Thermal strain sensitivity of the dielectric property was investigated for (111)-textured polycrystalline Bi-Zn-Nb-O films. Cubic pyrochlore films with similar crystallinity and the degree of the orientation were obtained on various substrates, and their 111 lattice spacing monotonously increased with the increasing thermal expansion coefficient of the substrates. The dielectric constant at 0 kV/cm and its tunability were almost independent of the residual strain, unlike highly sensitive (Ba0.5Sr0.5)TiO3 films. This strain independent characteristic of the dielectric property of pyrochlore Bi-Zn-Nb-O film is a big advantage in actual applications. 0 2008 American Institute of Physics.

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Type
research article
DOI
10.1063/1.2919723
Web of Science ID

WOS:000256485700044

Author(s)
Funakubo, Hiroshi
Okaura, Shingo
Suzuki, Muneyasu
Uchida, Hiroshi
Koda, Seiichiro
Ikariyama, Rikyu
Yamada, Tomoaki  
Date Issued

2008

Publisher

AIP American Institute of Physics

Published in
Applied Physics Letters
Volume

92

Issue

18

Article Number

182901

Subjects

Thin-Films

•

Cubic Pyrochlore

•

Relaxation

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LC  
Available on Infoscience
November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/61342
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