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  4. Electrical model of a single pixel SOI phototransistor relying on the transient charge pumping technique
 
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conference paper

Electrical model of a single pixel SOI phototransistor relying on the transient charge pumping technique

Harik, L.
•
Kayal, M.  
•
Sallese, Jean-Michel  
2007
Proceedings of the IEEE Sensors, 2007
Sensors, 2007 IEEE

In this paper a floating body partially depleted SOI MOSFET used to measure light intensity using the transient charge pumping [1] is modeled through an equivalent electrical circuit. Essentially, photogenerated charges of the MOSFET are converted into a charge pumping frequency needed to maintain the drain current constant during the illumination. This contrasts with other conventional methods that rely on an accurate quantification of the drain current to measure the light intensity. Flux densities as low as 2mW/m2 were measured, thus confirming the potential of this approach. © 2007 IEEE.

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Type
conference paper
DOI
10.1109/ICSENS.2007.4388465
Web of Science ID

WOS:000254563600147

Author(s)
Harik, L.
•
Kayal, M.  
•
Sallese, Jean-Michel  
Date Issued

2007

Published in
Proceedings of the IEEE Sensors, 2007
ISBN of the book

978-1-4244-1262-4

Start page

581

End page

584

Subjects

MOSFET

•

equivalent circuits

•

phototransistors

•

silicon-on-insulator

Note

IMM-STI- Electrical Department, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland, Export Date: 19 January 2010, Source: Scopus, Art. No.: 4388465, References: Okhonin, S., Nagoga, M., Fazan, P., Principles of transient charge pumping on partially depleted SOI MOSFETs (2002) IEEE Electron Device Letters, 23, pp. 279-281. , May; Gamal, A.E., Eltoukhy, H., An introduction to the technology, design and performance limits, presenting recent developments and future directions (2005) IEEE Circuits and Devices, , May-June; Yamamoto, H., Taniguchi, K., Hamaguchi, C., High-sensitivity SOI MOS photodetector with self-amplification (1996) Journal of Applied Physics, 35, pp. 1382-1386; Zhang, W., Chan, M., Ko, P.K., Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate (2000) IEEE Transactions on Electron Devices, 47 (7), p. 1375. , July; Saliese, J.-M., Porret, A.-S., A novel approach to oharge-based non-quasi-static model of the MOS transistor valid in all modes of operation (2000) Solid-State Electronics, 44, pp. 887-894; L. Harik, J-M. Saliese and M. Kayal, Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector to be published in ESSDERC September 2007Heremans, P., Witters, J., Groeseneken, G., Maes, H.E., Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation (1989) IEEE Transactions on Electron Devices, 36 (7), pp. 1318-1335. , July

URL

URL

http://tinyurl.com/2v4zacc
Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
GR-KA  
EDLAB  
Event nameEvent placeEvent date
Sensors, 2007 IEEE

Atlanta, GA, USA

October 28-31, 2007

Available on Infoscience
October 21, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55909
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