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research article

SOI digital pixel sensor based on charge pumping

Harik, L.
•
Sallese, Jean-Michel  
•
Kayal, M.  
2010
Microelectronics Journal

In this paper, a digital pixel sensor in silicon on insulator (SOI) is presented. The active part is a partially depleted SOI phototransistor. The technique elaborated in Harik et al. (2008) [1] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating body SOI MOSFET to implement a first order delta sigma modulator in each pixel. Measured data show that the pixel has a sensitivity of 3 mW/m2 and a resolution of about 7 bits. This pixel can be operated in two modes: weak inversion (Idc=1.2 μA) and moderate inversion (Idc=15 μA). © 2010 Elsevier Ltd. All rights reserved.

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Type
research article
DOI
10.1016/j.mejo.2010.01.016
Web of Science ID

WOS:000284304600011

Author(s)
Harik, L.
•
Sallese, Jean-Michel  
•
Kayal, M.  
Date Issued

2010

Publisher

Elsevier

Published in
Microelectronics Journal
Volume

41

Issue

11

Start page

758

End page

765

Subjects

Soi

•

Phototransistor

•

Floating body

•

Delta-sigma modulation

•

Dynamic-Range

•

Model

Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
GR-KA  
EDLAB  
Available on Infoscience
November 4, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/56665
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