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research article

3D stacked arrays of fins and nanowires on bulk silicon

Bopp, M.  
•
Coronel, P.
•
Hibert, C.  
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2010
Microelectronic Engineering

The development of a particular etching recipe involving two sequences of a Deep Reactive Ion Etching followed by an isotropic etching step for the realization of 3D stacked arrays of fins and nanowires on bulk silicon is reported. Such a recipe can be used among the new processes and designs developed to control the shape and formation of such 3D structures. Applications in microelectronics (stacked field effect transistors) and microsystems (arrays of MEMS resonators and photonic structures) are foreseen. (C) 2010 Elsevier B.V. All rights reserved.

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Type
research article
DOI
10.1016/j.mee.2009.12.036
Web of Science ID

WOS:000276300700169

Author(s)
Bopp, M.  
•
Coronel, P.
•
Hibert, C.  
•
Ionescu, A. M.  
Date Issued

2010

Publisher

Elsevier

Published in
Microelectronic Engineering
Volume

87

Issue

5-8

Start page

1348

End page

1351

Subjects

3D stacked nanowires and fins

•

Top-down fabrication

•

Silicon etching

Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
CMI  
Available on Infoscience
November 8, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/57235
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