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research article

Exciton oscillator strength in GaN/AlGaN quantum wells

Zamfirescu, M.
•
Gil, B.
•
Grandjean, N.  
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2002
Physica Status Solidi a-Applications and Materials Science

We have found experimentally that the exciton oscillator strength decreases dramatically with increase of the QW width in a GaN/Al0.07Ga0.93N system. The collapse of the oscillator strength is a manifestation of the polarisation field effect, as confirmed by our variational calculation. We find that only excitons in very thin quantum wells have an oscillator strength exceeding that of the exciton in bulk GaN.

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Type
research article
DOI
10.1002/1521-396X(200203)190:1<129::AID-PSSA129>3.0.CO;2-Q
Author(s)
Zamfirescu, M.
Gil, B.
Grandjean, N.  
Malpuech, G.
Kavokin, A.
Bigenwald, P.
Massies, J.
Date Issued

2002

Published in
Physica Status Solidi a-Applications and Materials Science
Volume

190

Issue

1

Start page

129

End page

133

Subjects

OPTICAL-PROPERTIES

•

DOTS

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/54986
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