Temperature and excitation intensity dependencies of the photoluminescence spectra of GaAs/(AlGa)As disordered superlattices
The temperature and excitation intensity dependencies of the photoluminescence (PL) spectra of GaAs/Al0.3Ga0.7As superlattices (SL's) having randomly distributed well widths are studied. Our results indicate that the electronic properties of disordered SL's are similar to those of other disordered semiconductors: at low energies the electronic states are essentially localized, while at higher energies they are extended. Further, the PL spectra feature a disorder-induced fine structure, and they shift to the red with T simply following the reduction of the band gap. The PL efficiency shows a weaker decrease with increasing T than the ordered SL. The dependence of the PL spectra on the excitation intensity shows an anomalous behavior of the disorder-induced fine-structure recombination lines.
WOS:A1996VL14500014
1996
54
11
7643
7646
Ist nazl fis mat,unita bari,i-70126 bari,italy. ecole polytech fed lausanne,phb ecublens,inst phys appl,ch-1015 lausanne,switzerland. ecole polytech fed lausanne,phb ecublens,inst micro & optoelect,ch-1015 lausanne,switzerland. Capozzi, V, UNIV BARI,DIPARTIMENTO FIS,VIA AMENDOLA 173,I-70126 BARI,ITALY.
ISI Document Delivery No.: VL145
Cited Reference Count: 13
Cited References:
ANDERSON PW, 1958, PHYS REV, V109, P1492
ARENT DJ, 1994, PHYS REV B, V49, P11173
CAPOZZI V, 1991, I PHYS C SER, V123, P195
CHOMETTE A, 1986, PHYS REV LETT, V57, P1564
DOW J, 1982, PHYS REV B, V25, P6218
KOHMOTO M, 1986, PHYS REV B, V34, P5043
LORUSSO GF, 1996, PHYS REV B, V53, P1018
LORUSSO GF, 1996, SEMICOND SCI TECH, V11, P308
LORUSSO GF, 1996, SOLID STATE COMMUN, V98, P705
MADER KA, 1995, PHYS REV LETT, V74, P2555
SASAKI A, 1994, APPL PHYS LETT, V64, P2016
VARSHNI YP, 1967, PHYSICA, V34, P149
WANG LW, 1996, PHYS REV B, V53, P2010
REVIEWED
EPFL