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research article
Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors
Type
research article
Authors
Publication date
1999
Publisher
Published in
Volume
74
Issue
25
Article Number
3818
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
August 27, 2015
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