research article
Multilevel devices of YBa/sub 2/Cu/sub 3/O/sub 7/ with NdGaO/sub 3/ barrier
We have fabricated YBa/sub 2/Cu/sub 3/O/sub 7/ ramp-type junctions incorporating a barrier layer of NdGaO/sub 3/ with a nominal thickness of 2 nm. The junctions exhibit pronounced Josephson effects and operate up to 82 K. The characteristics are well described within the resistively shunted junction model. We observe large hysteresis parameters /spl beta//sub c/ even at elevated temperatures. The output voltage of a high-T/sub c/ dc SQUID is found to benefit from the intrinsic junction capacitance.
Type
research article
Author(s)
Grundler, D.
Krumme, J.-P.
David, B.
Doessel, O.
Date Issued
1995
Published in
Volume
5
Issue
2
Start page
2751
End page
2754
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
July 8, 2015
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