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research article

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Trivino, N. Vico  
•
Rossbach, G.  
•
Dharanipathy, U.
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2012
Applied Physics Letters

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and usual dry etching techniques. The membrane was released by underetching the Si (111) substrate. Micro-photoluminescence measurements performed at low temperature exhibit a quality factor as high as 5200 at similar to 420 nm, a value suitable to expand cavity quantum electrodynamics to the near UV and the visible range and to develop nanophotonic platforms for biofluorescence spectroscopy. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684630]

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Type
research article
DOI
10.1063/1.3684630
Web of Science ID

WOS:000300436800003

Author(s)
Trivino, N. Vico  
•
Rossbach, G.  
•
Dharanipathy, U.
•
Levrat, J.  
•
Castiglia, A.  
•
Carlin, J.-F.  
•
Atlasov, K. A.
•
Butte, R.  
•
Houdre, R.  
•
Grandjean, N.  
Date Issued

2012

Publisher

American Institute of Physics

Published in
Applied Physics Letters
Volume

100

Issue

7

Article Number

071103

Subjects

Spontaneous-Emission

•

Nanocavities

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
SCI-SB-RH  
Available on Infoscience
April 5, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/79235
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