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  4. Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers
 
research article

Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers

Kret, S.
•
Maciejewski, G.
•
Dluzewski, P.
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2003
Materials Chemistry and Physics

The In composition is investigated in GaN/InGaN multi-quantum wells (QWs) by measurement of the local lattice distortion in high-resolution electron microscopy (HREM) images taken along the [1120] zone axis by image processing. The direct peak-finding procedure is more adequate for analysing images taken in the [1120] zone axis in comparison with the geometric-phase method since the information from different beams must be averaged. The finite element (FE) modelling and image simulation were combined in order to determine the error bars of the composition evaluation. (C) 2003 Elsevier Science B.V. All rights reserved.

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Type
research article
DOI
10.1016/s0254-0584(02)00600-4
Author(s)
Kret, S.
Maciejewski, G.
Dluzewski, P.
Ruterana, P.
Grandjean, N.  
Damilano, B.
Date Issued

2003

Published in
Materials Chemistry and Physics
Volume

81

Issue

2-3

Start page

273

End page

276

Subjects

HREM

•

finite element modelling

•

InGaN

•

strain measurement

•

quantum wells

•

TRANSMISSION ELECTRON-MICROSCOPY

•

ELASTIC RELAXATION

•

HREM

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/54997
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