Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations