Field-enhanced design of steep-slope VO2 switches for low actuation voltage
The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability. Exploiting this design, we characterized VO2 switches with extremely abrupt transitions (< 1 mV/dec) until 60 degrees C and a reduction in actuation voltage up to 38.3% with respect to conventional devices.
WOS:000386655900085
2016
New York
978-1-5090-2969-3
4
Proceedings of the European Solid-State Device Research Conference
352
355
REVIEWED
EPFL
Event name | Event place | Event date |
Lausanne, Switzerland | 12-15 September 2016 | |