research article
Free-Electron Laser Spectroscopy of Semiconductors and Interfaces
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge discontinuity measurements are discussed in order to illustrate the flexibility of the free-electron laser as a research tool.
Type
research article
Web of Science ID
WOS:A1994NZ03200097
Author(s)
McKinley, J. T.
Albridge, R. G.
Barnes, A. V.
Chen, G. C.
Davidson, J. L.
Languell, M. L.
Polavarapu, P. L.
Smith, J. F.
Yang, X.
Ueda, A.
Date Issued
1994
Volume
12
Issue
4
Start page
2323
End page
2326
Note
Ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Mckinley, jt, vanderbilt univ,dept phys & astron,box 1807 stn b,nashville,tn 37235.
ISI Document Delivery No.: NZ032
Part 2
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
Available on Infoscience
October 3, 2006
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