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research article
Free-Electron Laser Spectroscopy of Semiconductors and Interfaces
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge discontinuity measurements are discussed in order to illustrate the flexibility of the free-electron laser as a research tool.
Type
research article
Web of Science ID
WOS:A1994NZ03200097
Author(s)
McKinley, J. T.
•
Albridge, R. G.
•
Barnes, A. V.
•
Chen, G. C.
•
Davidson, J. L.
•
Languell, M. L.
•
Polavarapu, P. L.
•
Smith, J. F.
•
Yang, X.
•
Ueda, A.
Date Issued
1994
Volume
12
Issue
4
Start page
2323
End page
2326
Note
Ecole polytech fed lausanne,ch-1015 lausanne,switzerland. Mckinley, jt, vanderbilt univ,dept phys & astron,box 1807 stn b,nashville,tn 37235.
ISI Document Delivery No.: NZ032
Part 2
Peer reviewed
REVIEWED
Written at
EPFL
Available on Infoscience
October 3, 2006
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