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conference paper
Proton diffusion in amorphous SiO2 and hafnium silicate by Ab Initio molecular dynamics
2007
Physics of Semiconductors, Pts A and B
We study proton diffusion in amorphous SiO2 and hafnium silicates at the atomic scale. In amorphous SiO2, ab initio molecular dynamics suggest that the dominant atomic process consists in cross-ring interoxygen hopping assisted by network vibrations. In hafnium silicates, we find that the proton localizes on O atoms bonded to Hf atoms, in accord with our static total-energy calculations. These results imply that in stacked gate oxides the proton preferentially localizes within the high-kappa oxide rather than within the SiO2 interlayer.
Type
conference paper
Web of Science ID
WOS:000246281800096
Author(s)
Date Issued
2007
Journal
Physics of Semiconductors, Pts A and B
ISBN of the book
978-0-7354-0397-0
Series title/Series vol.
AIP Conference Proceedings; 893
Start page
195
End page
196
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Event name | Event place | Event date |
Vienna (Austria) | 24-28 July 2006 | |
Available on Infoscience
October 8, 2009
Use this identifier to reference this record