conference paper
Luminescence of laser irradiated (Al,Ga)As-multilayer structures
Gilgen, H. H.
•
Salathe, R. P.
•
Rytz-Froidevaux, Y.
1981
Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds
A new luminescence band is observed in optically pumped Ge-doped (Al,Ga)As multilayer structures, that were previously subjected to laser irradiation. The band is shifted by 90 meV to longer wavelength with respect to the luminescence peak of the unexposed regions. The laser power density necessary for processing is about 0.53 MW/cm2. The processed region has a width of 1 μm and a depth of 0.2 μm
Type
conference paper
Author(s)
Gilgen, H. H.
Salathe, R. P.
Rytz-Froidevaux, Y.
Date Issued
1981
Publisher
Published in
Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds
Note
Inst. of Appl. Phys., Univ. of Berne, Berne, Switzerland
1770678
(Al,Ga)As
multilayer structures
luminescence band
laser irradiation
laser power density
(Al,Ga)As:Ge
III-V semiconductor
Written at
OTHER
EPFL units
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Available on Infoscience
January 20, 2009
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