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  4. In situ growth of superconducting YBa2Cu3O7-δ thin films on Si with conducting indium-tin-oxide buffer layers
 
research article

In situ growth of superconducting YBa2Cu3O7-δ thin films on Si with conducting indium-tin-oxide buffer layers

Kellett, B.J
•
James, J.H
•
Gauzzi, A
Show more
1990
Applied Physics Letters

Superconducting YBa2Cu3O7-δ (YBCO) thin films have been grown in situ on Si with conducting indium-tin-oxide (ITO) buffer layers. ITO allows YBCO to be electrically connected to the underlying Si substrate. Both the YBCO film and ITO buffer layer, grown by ion beam sputtering, are textured and polycrystalline with a combined room-temperature resistivity of about 2 mΩ cm. Superconducting onsets are 92 K with zero resistance at 68 K

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Type
research article
DOI
10.1063/1.104221
Author(s)
Kellett, B.J
James, J.H
Gauzzi, A
Dwir, B
Pavuna, D  
Reinhart, F.K
Date Issued

1990

Publisher

AIP American Institute of Physics

Published in
Applied Physics Letters
Volume

57

Issue

11

Start page

1146

End page

1148

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPRX  
Available on Infoscience
March 26, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/4000
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