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  4. High-reflectivity AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors with peak wavelength around 350 nm
 
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research article

High-reflectivity AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors with peak wavelength around 350 nm

Wang, T.
•
Lynch, R.J.
•
Parbrook, P.J.
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2004
Applied Physics Letters

Al0.49Ga0.51N/Al0.16Ga0.84N distributed Bragg reflectors (DBRs), designed for the ultraviolet spectral region, are reported. The crack-free structures are grown on sapphire substrates by metalorganic chemical vapor deposition. A peak reflectivity of 91% at 353 nm with a stop-band width of 17 nm was obtained at 300 K using a 25 pair DBR. Structures at 6 nm shorter wavelength show asymmetric spectra, a narrower stop band, and slightly decreased peak reflectivity. By studying the spectra as a function of temperature, the degradation is shown to arise from internal absorption at short wavelengths. Simulations based on transfer matrix theory agree well with the experimental data. (C) 2004 American Institute of Physics.

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Type
research article
DOI
10.1063/1.1766404
Author(s)
Wang, T.
•
Lynch, R.J.
•
Parbrook, P.J.
•
Butté, R.  
•
Alyamani, A.
•
Sanvitto, D.
•
Whittaker, D.M.
•
Skolnick, M.S
Date Issued

2004

Publisher

American Institute of Physics

Published in
Applied Physics Letters
Volume

85

Start page

43

End page

45

Subjects

Molecular-Beam Epitaxy

•

Light-Emitting Diode

•

Laser

•

Emission

•

Sapphire

•

Algan

Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
November 12, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/57450
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