research article
Inhomogeneous strain relaxation and detect distribution of ZnTe layers deposited on (110)GaAs by metalorganic vapor phase epitaxy (vol 78, pg 229, 1995)
Type
research article
Web of Science ID
WOS:A1996TN21100087
Author(s)
Date Issued
1996
Published in
Volume
79
Issue
1
Start page
562
End page
562
Note
Infm lecce,unita gnsm,i-73100 lecce,italy. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. cnr,ime,inst mat elettron,i-73100 lecce,italy. univ padua,dipartimento fis g galilei,i-35100 padua,italy. infm padova,unita gnsm,i-35100 padua,italy. Lovergine, N, UNIV LECCE,DIPARTIMENTO SCI MAT,VIA ARNESANO,I-73100 LECCE,ITALY.
ISI Document Delivery No.: TN211
Cited Reference Count: 1
Cited References:
LOVERGINE N, 1995, J APPL PHYS, V78, P229
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
August 31, 2007
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