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research article

Gate-induced superconductivity in atomically thin MoS2 crystals

Costanzo, Davide
•
Jo, Sanghyun
•
Berger, Helmuth  
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2016
Nature Nanotechnology

When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle bandstructure. Phenomena driven by interactions are also observed, but identifying experimentally systematic trends in their thickness dependence is challenging. Here, we explore the evolution of gate-induced superconductivity in exfoliated MoS2 multilayers ranging from bulk-like to individual monolayers. We observe a clear transition for all thicknesses down to the ultimate atomic limit, providing the first demonstration of gate-induced superconductivity in atomically thin exfoliated crystals. Additionally, we characterize the superconducting state by measuring the critical temperature T-C and magnetic field BC in a large number of multilayer devices while decreasing their thickness. We find that the superconducting properties exhibit a pronounced reduction in T-C and B-C when going from bilayers to monolayers, for which we discuss possible microscopic mechanisms.

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Type
research article
DOI
10.1038/Nnano.2015.314
Web of Science ID

WOS:000373455500010

Author(s)
Costanzo, Davide
Jo, Sanghyun
Berger, Helmuth  
Morpurgo, Alberto F.
Date Issued

2016

Publisher

Nature Publishing Group

Published in
Nature Nanotechnology
Volume

11

Issue

4

Start page

339

End page

344

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSE  
Available on Infoscience
July 19, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/127344
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