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  4. Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge∕Si(100)-(2×1): Initial stage of atomic layer deposition of HfO2 on SiGe surface
 
research article

Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge∕Si(100)-(2×1): Initial stage of atomic layer deposition of HfO2 on SiGe surface

Chen, Wei  
•
Lu, Hong-Liang
•
Zhang, David Wei
Show more
2005
Applied Physics Letters

We have investigated adsorption and dissociation of water and HfCl4 on Ge/Si(100)-(2x1) surface with density functional theory. The Si-Ge heterodimer and Ge-Ge homodimer are employed to represent the Si1-xGex surface. The activation energy for adsorption of water on Ge-Ge homodimer is much higher than that on Si-Ge heterodimer. No net activation barrier exists during the adsorption of HfCl4 on both SiGe surface dimers. The differences in the potential energy surface between reactions on Si-Ge and Ge-Ge dimers are due to different bond strengths. It should also be noticed that the activation energy for HfCl4 is quite flat, thus HfCl4 adsorbs and dissociates on Ge/Si(100)-(2x1) easily.

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Type
research article
DOI
10.1063/1.1899253
Author(s)
Chen, Wei  
Lu, Hong-Liang
Zhang, David Wei
Xu, Min
Ren, Jie
Zhang, Jian-Yun
Wang, Ji-Tao
Wang, Li-Kang
Date Issued

2005

Publisher

American Institute of Physics

Published in
Applied Physics Letters
Volume

86

Issue

14

Article Number

142901

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
ITP  
Available on Infoscience
January 4, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/121967
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