InGaN/GaN self-assembled quantum dots (QDs) were obtained by molecular beam epitaxy making use of the Stranski-Krastanov growth mode. Room-temperature photoluminescence (PL) energy of QDs was observed from 2.6 to 3.1 eV depending on the dot size. PL linewidths as low as 40-70 meV at 10 K and 90-110 meV at 300 K indicate low dot size dispersion. The comparison of PL intensity versus temperature of an InGaN epilayer and InGaN/GaN QDs demonstrates the higher radiative efficiency of the latter. (C) 1999 American Institute of Physics. [S0003-6951(99)01950-6].