Density Dependence of Electron-Hole Plasma Lifetime in Semiconductor Quantum-Wells
We report on an investigation of the electron-hole (e-h) plasma decay time tau(tot) versus e-h pair density in semiconductor quantum wells. We determine the density reached in a steady-state photoluminescence experiment from the optical spectra and compare it with the e-h pair generation rate. We find that in our samples only radiative e-h recombination is important, and that nonradiative processes and plasma expansion have negligible effects on tau(tot). At plasma densities larger than 5 x 10(12) cm-2, we observe a strong nonlinear reduction of the e-h capture rate into the quantum wells.
WOS:A1992JV11200083
1992
46
15
9861
9864
Ecole polytech fed lausanne,inst phys appl,ch-1015 lausanne,switzerland. Bongiovanni, g, univ cagliari,dipartimento sci fis,via osped 72,i-09124 cagliari,italy.
ISI Document Delivery No.: JV112
Cited Reference Count: 23
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