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research article

Cathodoluminescence and Photoluminescence Studies of Dislocations in Gaas/Algaas Quantum-Wells

Araujo, D.
•
Oelgart, G.
•
Ganiere, J. D.  
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1993
Journal of Applied Physics

The optical properties of low pressure metal organic vapor deposition grown GaAs/AlxGa1-xAs (x = 0.5) single quantum well structures (SQW) with grown-in dislocations (GD) were studied by low temperature cathodoluminescence (CL) and photoluminescence (PL). High luminescence efficiency around the GD was observed and attributed to impurity decoration. CL spectra show a region surrounding the GD that consists of Si impurities and native defects in the SQW and barrier layers. The diameter of this region was found to be in the order of 1 mum using spectrally resolved CL micrographs.

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Type
research article
DOI
10.1063/1.354761
Web of Science ID

WOS:A1993LQ12700084

Author(s)
Araujo, D.
•
Oelgart, G.
•
Ganiere, J. D.  
•
Reinhart, F. K.
Date Issued

1993

Published in
Journal of Applied Physics
Volume

74

Issue

3

Start page

1997

End page

2003

Subjects

PHOTO-LUMINESCENCE

•

GAAS

•

SUPERLATTICES

•

IMPURITIES

•

DEFECTS

•

MODEL

•

SI

Note

Ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. univ leipzig,dept phys,o-7010 leipzig,germany.

ISI Document Delivery No.: LQ127

Cited Reference Count: 24

Cited References:

ALT HC, 1988, APPL PHYS LETT, V52, P1661

ANDREANI LC, 1990, PHYS REV B, V42, P8929

ARAUJO D, 1991, I PHYS C SER, V117, P703

ARAUJO D, 1993, APPL PHYS LETT, V62, P2992

BOHM K, 1979, J APPL PHYS, V50, P5453

BOURGOIN JC, 1988, J APPL PHYS, V64, R65

BRIONES F, 1982, J ELECTRON MATER, V11, P847

DING J, 1979, APPL PHYS LETT, V50, P5453

EINEVOLL GT, 1990, PHYS REV B, V41, P1447

EINEVOLL GT, 1992, COMMUNICATION

FRAIZZOLI S, 1990, PHYS REV B, V41, P5096

FRIGERI C, 1989, J APPL PHYS, V65, P4646

ILLEGEMS M, 1985, TECHNOLOGY PHYSICS M, P83

KY NH, 1991, J APPL PHYS, V69, P7585

KY NH, 1991, J APPL PHYS, V70, P3887

OELGART G, 1992, J APPL PHYS, V71, P1551

OLEGART G, INPRESS J APPL PHYS

PEARAH PJ, 1985, APPL PHYS LETT, V47, P166

RICHTER W, 1986, ADV SOLID STATE PHYS, V26, P335

SKROMME BJ, 1988, SOLID STATE COMMUN, V66, P543

VANDEVEN J, 1986, J APPL PHYS, V60, P3735

VISSER EP, 1990, J APPL PHYS, V68, P4242

WEYHER JL, 1986, J CRYST GROWTH, V78, P191

XU HQ, 1990, PHYS REV B, V41, P5979

Editorial or Peer reviewed

REVIEWED

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Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11085
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