High efficiency triple-junction solar cells are currently made of III−V semiconductors using expensive deposition methods. Perovskite/perovskite/silicon monolithic triple-junction solar cells could be a lower-cost alternative as no epitaxial growth is required. We demonstrate here that such devices can be realized using textured crystalline silicon bottom cells for optimal light management. By changing the perovskite absorbers composition and recombination junctions to make them compatible with the subsequent fabrication steps, triple-junction devices with open-circuit voltage up to 2.69 V are realized. To illustrate the applicability of the technology, we show how the band gaps and thicknesses of the top and middle cells can be modified to approach current-matching conditions. The limitations of these devices are discussed, as well as strategies to make them competitive with III−V triple-junction cells. The concepts presented here are a first step toward high-efficiency, high-voltage, and low-cost triple-junction photovoltaics.