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conference paper
Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys
2008
Materials Science In Semiconductor Processing
Density-functional theory is used to model interstitial iron and its complexes with aluminum in Si-rich SiGe alloys with Ge concentration up to 8%. Both short-range and long-range defect-Ge interactions are considered. It is found that Fe prefers Si-rich regions. The shifts of the electrical levels of Fe-acceptor pairs are calculated using the marker method. (C) 2008 Elsevier Ltd. All rights reserved.
Type
conference paper
Web of Science ID
WOS:000271700600037
Authors
Carvalho, A.
•
Coutinho, J.
•
Jones, R.
•
Barroso, M.
•
Goss, J. P.
•
Briddon, P. R.
Publication date
2008
Published in
Materials Science In Semiconductor Processing
Volume
11
Start page
332
End page
335
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Strasbourg, FRANCE | May 26-30, 2008 | |
Available on Infoscience
November 30, 2010
Use this identifier to reference this record