conference paper
Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys
2008
Materials Science In Semiconductor Processing
Density-functional theory is used to model interstitial iron and its complexes with aluminum in Si-rich SiGe alloys with Ge concentration up to 8%. Both short-range and long-range defect-Ge interactions are considered. It is found that Fe prefers Si-rich regions. The shifts of the electrical levels of Fe-acceptor pairs are calculated using the marker method. (C) 2008 Elsevier Ltd. All rights reserved.
Type
conference paper
Web of Science ID
WOS:000271700600037
Author(s)
Carvalho, A.
Coutinho, J.
Jones, R.
Barroso, M.
Goss, J. P.
Briddon, P. R.
Date Issued
2008
Published in
Materials Science In Semiconductor Processing
Volume
11
Start page
332
End page
335
Subjects
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Strasbourg, FRANCE | May 26-30, 2008 | |
Available on Infoscience
November 30, 2010
Use this identifier to reference this record