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  4. Co-Sputtered Monocrystalline GeSn for Infrared Photodetection
 
conference paper

Co-Sputtered Monocrystalline GeSn for Infrared Photodetection

Giunto, Andrea  
•
Humblot, Nicolas  
•
Burnier, Luc  
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August 6, 2020
Proceedings of the 2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM)
2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM)

We demonstrate monocrystalline growth of GeSn on Ge and Si substrates by co-sputtering. We discuss the evolution of film growth with thickness, elucidating the effects of substrate temperature, sputtering source, and the importance of hydrogen dilution in the plasma.

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Type
conference paper
DOI
10.1109/SUM48678.2020.9161032
Author(s)
Giunto, Andrea  
Humblot, Nicolas  
Burnier, Luc  
Krammer, Anna  
Schuler, Andreas  
Fontcuberta i Morral, Anna  
Date Issued

2020-08-06

Publisher

IEEE

Published in
Proceedings of the 2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM)
ISBN of the book

978-1-728158-87-7

Series title/Series vol.

2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM)

Start page

1

End page

2

Subjects

GeSn

•

co-sputtering

•

thin film

•

infrared detection

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LESO-PB  
LMSC1  
Event nameEvent placeEvent date
2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM)

Online conference

July 13-15, 2020

Available on Infoscience
February 19, 2021
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/175394
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