Strain and surface morphology in lattice-matched ZnSe/InxGa1-xAs heterostructures
Lattice-matched ZnSe/InxGa1-xAs heterostructures were fabricated by molecular beam epitaxy on GaAs(001)2x4 surfaces. We find that the partial character of the strain relaxation within the ternary layer can be compensated by a suitable excess in the In concentration to match the free-surface lattice parameter to ZnSe. The surface of the II-VI epilayer, however, exhibits a cross-hatched pattern of surface corrugations oriented along orthogonal [110] directions. This complex surface morphology reflects the formation of surface slip steps during the nucleation of dislocation half-loops at the surface and the establishment of the misfit dislocation network at the InxGa1-xAs/GaAs interface. (C) 1998 American Institute of Physics.
WOS:000072310700019
1998
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5
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INFM, Lab Nazl TASC, Area Ricerca, I-34012 Trieste, Italy. Ecole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland. Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria. CNR, Ist ICMAT, I-00016 Rome, Italy. Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy. Heun, S, INFM, Lab Nazl TASC, Area Ricerca, Padriciano 99, I-34012 Trieste, Italy.
ISI Document Delivery No.: YZ942
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