28-nm Bulk and FDSOI Cryogenic MOSFET (Invited Paper)

Enz, Christian

doi:10.1109/CICTA.2018.8706117

Beckers, Arnout

•

Jazaeri, Farzan

•

Enz, Christian

2018

Proceedings of the 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2018)

IEEE International Conference on Integrated Circuits, Technologies and Applications (IEEE ICTA)

28-nm Bulk and FDSOI Cryogenic MOSFET (Invited Paper)

conference paper

This paper presents an intensive overview of the characterization and modeling of advanced 28-nm hulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.

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Beckers ICTA 2018.pdf

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Preprint

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openaccess

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5.45 MB

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Adobe PDF

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