28-nm Bulk and FDSOI Cryogenic MOSFET (Invited Paper)

Beckers, Arnout; Jazaeri, Farzan; Enz, Christian

doi:10.1109/CICTA.2018.8706117

conference paper

28-nm Bulk and FDSOI Cryogenic MOSFET (Invited Paper)

Beckers, Arnout

•

Jazaeri, Farzan

•

Enz, Christian

2018

Proceedings of the 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2018)

IEEE International Conference on Integrated Circuits, Technologies and Applications (IEEE ICTA)

This paper presents an intensive overview of the characterization and modeling of advanced 28-nm hulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.

Name

Beckers ICTA 2018.pdf

Type

Preprint

Version

Submitted version (Preprint)

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openaccess

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5.45 MB

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Adobe PDF

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