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  4. 1/f Noise in Fully Integrated Electrolytically Gated FinFETs with Fin Width Down to 20nm
 
conference paper not in proceedings

1/f Noise in Fully Integrated Electrolytically Gated FinFETs with Fin Width Down to 20nm

Martens, Koen
•
Du Bois, Bert
•
Kong Siew, Yong
Show more
Enz, Christian  
2019
25th International Conference on Noise and Fluctuations (ICNF 2019)
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Type
conference paper not in proceedings
DOI
10.5075/epfl-ICLAB-ICNF-269192
Author(s)
Martens, Koen
Du Bois, Bert
Kong Siew, Yong
Gupta, Anshul
Veloso, Anabela
Dupuy, Emmanuel
Radisic, Dunja
Altamirano Sanchez, Efrain
Van Roy, Willem
Severi, Simone
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Editors
Enz, Christian  
Date Issued

2019

Publisher

ICLAB

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
ICLAB  
Event nameEvent placeEvent date
25th International Conference on Noise and Fluctuations (ICNF 2019)

EPFL Neuchâtel campus - Neuchâtel, Switzerland

18 - 21 June 2019

Available on Infoscience
August 21, 2019
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/160038
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