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research article

Piezoelectric response of thin films determined by charge integration technique: Substrate bending effects

Barzegar, A.  
•
Damjanovic, D.  
•
Ledermann, N.  
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2003
Journal of Applied Physics

Unexpectedly high-longitudinal piezoelectric coefficients have recently been reported in c-axis oriented Pb(Zr,Ti)O-3 thin films with morphotropic phase boundary composition [Fu , Appl. Phys. Lett. 80, 3572 (2002)]. Our analysis and experimental results show that, in comparison with other methods commonly used to investigate piezoelectric response of thin films, the charge integration technique used by Fu may lead to an order of magnitude higher apparent piezoelectric coefficients if the substrate on which the film was deposited is bent. When this is the case, the large response is due to the transverse piezoelectric effect caused by the substrate bending. (C) 2003 American Institute of Physics.

  • Details
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Type
research article
DOI
10.1063/1.1558228
Web of Science ID

WOS:000181863100059

Author(s)
Barzegar, A.  
Damjanovic, D.  
Ledermann, N.  
Muralt, P.  
Date Issued

2003

Published in
Journal of Applied Physics
Volume

93

Issue

8

Start page

4756

End page

4760

Subjects

coefficient e(31

•

f)

•

displacements

•

orientation

•

dependence

•

relaxation

•

ceramics

Note

Barzegar, A Swiss Fed Inst Technol, EPFL, IMXLC, Mat Inst,Ceram Lab, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, EPFL, IMXLC, Mat Inst,Ceram Lab, CH-1015 Lausanne, Switzerland

660YL

Cited References Count:20

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LC  
Available on Infoscience
August 21, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/233500
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