Optical spectroscopy of semiconductor quantum wires
We investigated the optical properties of excitons in quasi-one-dimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation: High-quality GaAs/AlxGa1-xAs heterostructures were grown using low-pressure organometallic chemical vapour deposition (OMCVD) on non-planar substrates. The experimentally observed subband separations are in good agreement with a theoretical calculation of the quantum-confined eigenstates, which includes the mapping of the crescent-shaped wire obtained on TEM micrographs. Additionally, a temperature dependence study of excitonic spectra reveals the dominant role of potential and size fluctuations in localizing the excitons.
WOS:A1995UB29400066
1995
17
11-12
1641
1650
Oberli, DY, ECOLE POLYTECH FED LAUSANNE,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND.
ISI Document Delivery No.: UB294
Cited Reference Count: 10
Cited References:
BASTARD G, 1991, SOLID STATE PHYS, V44, P229
BOCKELMANN U, 1991, EUROPHYS LETT, V16, P601
BOCKELMANN U, 1992, PHYS REV B, V45, P1888
CINGOLANI R, 1993, RIV NUOVO CIMENTO, V16, P1
CITRIN DS, 1991, PHYS REV B, V43, P11703
GRUNDMANN M, 1955, INT J NONLINEAR OPT, V4, P99
GUSTAFSSON A, UNPUB
KAPON E, 1989, PHYS REV LETT, V63, P430
RINALDI R, 1994, PHYS REV LETT, V73, P2899
SERCEL PC, 1991, PHYS REV B, V44, P5681
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EPFL