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research article
MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances
In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability. (C) 2002 Elsevier Science B.V. All rights reserved.
Type
research article
Authors
Cordier, Y.
•
Semond, F.
•
Lorenzini, P.
•
•
Natali, F.
•
Damilano, B.
•
Massies, J.
•
Hoel, V.
•
Minko, A.
•
Vellas, N.
Publication date
2003
Published in
Volume
251
Issue
1-4
Start page
811
End page
815
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
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