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  4. Analysis of DBE grown GaInAsP/InP heterostructures for 1.55 mu m lasers
 
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conference paper

Analysis of DBE grown GaInAsP/InP heterostructures for 1.55 mu m lasers

Gailhanou, M
•
Goldstein, L
•
Buffat, PA  
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1991
Third International Conference Indium Phosphide and Related Materials
  • Details
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Type
conference paper
DOI
10.1109/ICIPRM.1991.147463
Author(s)
Gailhanou, M
•
Goldstein, L
•
Buffat, PA  
•
Brosson, P
•
Fernier, B
•
Benoit, J
Date Issued

1991

Publisher

IEEE

Journal
Third International Conference Indium Phosphide and Related Materials
Start page

668

End page

671

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CIME  
Available on Infoscience
February 15, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/2723
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