One-Step Growth of Buried Heterostructures by Chemical Beam Epitaxy over Patterned InP Substrates
We studied the formation of buried heterostructures obtained in a single growth step over nonplanar substrates patterned with ridges. When the ridge dimensions are large enough, the growth on the mesa top is similar to that on a planar substrate. In contrast, ridge spacings below almost-equal-to 10 mum influence the composition of the alloys grown on the ridge as well as those grown in the valley centre. The possible surface mechanisms which may explain this behaviour are discussed.
WOS:A1994NB41200030
1994
136
1-4
173
178
Rudra, a, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NB412
Cited Reference Count: 15
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