research article
The use of molecular beam epitaxy for the synthesis of high purity III-V nanowires
November 12, 2008
The synthesis methods and properties of catalyst-free III-V nanowires with molecular beam epitaxy(MBE) are reviewed. The two main techniques are selective-area epitaxy(SAE) and gallium-assisted synthesis. The excellent structure and ultra-high purity characteristics of the grown nanowires are presented by Raman and photoluminescence spectroscopy. © 2008 IOP Publishing Ltd.
Type
research article
Scopus ID
2-s2.0-58149339928
Author(s)
Spirkoska, D.
Technical University of Munich
Colombo, C.
Technical University of Munich
Abstreiter, G.
Technical University of Munich
Technical University of Munich
Date Issued
2008-11-12
Published in
Volume
20
Issue
45
Article Number
454225
Start page
454225
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
July 22, 2025
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