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research article

Ultrathin GaAs layers embedded in AlAs: a perspective for intense short wavelength emission

Pietag, F.
•
Schwabe, R.
•
Gottschalch, V.
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1998
Microelectronic Engineering

Type-II GaAs/AlAs quantum-well samples grown by low-pressure metal-organic vapour-phase epitaxy consisting of 50 periods of either 2 monolayers (ML), 4 ML, 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs were under investigation. Even at room temperature dominant type-I luminescence has been observed. The peak wavelength of this emission ranges from 620 to 440 nm and is determined by the GaAs layer thickness. A comparison of the measured transition energies with model calculations applying an effective mass approach and an empirical tight-binding Green's function scheme confirmed this strong dependence. To our knowledge this is the first report on intense yellow, green, and blue luminescence from GaAs. 1998 Published by Elsevier Science B.V. All rights reserved.

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Type
research article
DOI
10.1016/S0167-9317(98)00219-6
Web of Science ID

WOS:000075867000078

Author(s)
Pietag, F.
•
Schwabe, R.
•
Gottschalch, V.
•
Di Ventra, M.
•
Bitz, A.
•
Staehli, J. L.  
Date Issued

1998

Published in
Microelectronic Engineering
Volume

43-4

Start page

561

End page

565

Note

Univ Leipzig, Fac Phys, D-04103 Leipzig, Germany. Univ Leipzig, Fac Chem, D-04103 Leipzig, Germany. Swiss Fed Inst Technol, Dept Phys, PH Ecublens, CH-1015 Lausanne, Switzerland. Pietag, F, Univ Leipzig, Fac Phys, Linnestr 3-5, D-04103 Leipzig, Germany.

ISI Document Delivery No.: 118XV

Cited Reference Count: 6

Cited References:

DIVENTRA M, 1997, PHYS REV B, V55, P13148

MADER KA, 1992, P INT M OPT EXC CONF, P341

MADER KA, 1992, THESIS SWISS FEDERAL

MASCHKE K, 1991, PHYS REV LETT, V67, P2646

MEYNADIER MH, 1988, PHYS REV LETT, V60, P1338

MOORE KJ, 1989, SPECTROSCOPY SEMICON, P293

Peer reviewed

REVIEWED

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Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11286
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