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research article

Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces

Almeida, J.
•
Sirigu, L.
•
Margaritondo, G.  
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1999
Journal of Physics D-Applied Physics

We report x-ray photoelectron spectroscopy experimental results on band offsets at Ge/Si(100)2 x 1 interfaces grown by hydrogen and Sb-surfactant mediated epitaxy. For Ge deposited at 400 degrees C in Si(100)2 x 1, the valence band discontinuity was of 0.72 +/- 0.07 eV. Using atomic hydrogen and a Sb-monolayer mediated growth, we obtained values of 0.75 +/- 0.07 and 0.69 +/- 0.07 eV. Our data show that the surfactant Ge layer strain induced effects on the modification of band offsets are surprisingly negligible.

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Type
research article
DOI
10.1088/0022-3727/32/3/002
Web of Science ID

WOS:000078628800002

Author(s)
Almeida, J.
•
Sirigu, L.
•
Margaritondo, G.  
•
Da Padova, P.
•
Quaresima, C.
•
Perfetti, P.
Date Issued

1999

Published in
Journal of Physics D-Applied Physics
Volume

32

Issue

3

Start page

191

End page

194

Subjects

PHOTOEMISSION SPECTRA

•

GE

•

HYDROGEN

•

SPECTROSCOPY

•

SURFACTANTS

•

SI(001)

•

STATES

•

GROWTH

•

SYSTEM

•

LAYER

Note

Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland. CNR, ISM, I-00133 Rome, Italy. Almeida, J, Ecole Polytech Fed Lausanne, Inst Phys Appl, CH-1015 Lausanne, Switzerland.

ISI Document Delivery No.: 167JM

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSE  
LPRX  
Available on Infoscience
October 3, 2006
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/234791
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