High-reflectance GaInP/GaAs distributed Bragg reflector
A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre wavelength of 980 nm, resulting in a total thickness of 5.8 mum. Highly stable growth conditions led to a maximum reflectance of 0.99 and to a variation in the centre wavelength of only 5 nm over the 2'' (50.8 mm) wafer. Transmission electron microscopy and X-ray diffraction measurements confirmed the vertical uniformity and the crystallographic quality of the sample.
WOS:A1993NE96700032
1993
29
21
1854
1855
Saintcricq, b, ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: NE967
Cited Reference Count: 10
Cited References:
BORN M, 1970, PRINCIPLES OPTICS
CHOA FS, 1991, APPL PHYS LETT, V59, P2820
GEELS RS, 1991, IEEE J QUANTUM ELECT, V27, P1359
MACLEOD HA, 1986, THIN FILM OPTICAL FI
MOBARHAN K, 1992, ELECTRON LETT, V28, P1510
PESSA M, 1993, MAY P E MRS SPRING M
RUDRA A, 1992, J CRYST GROWTH, V120, P338
SAKA T, 1993, J APPL PHYS, V73, P380
TANAKA H, 1986, J APPL PHYS, V59, P985
VONLEHMEN A, 1992, ELECTRON LETT, V28, P21
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