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research article

Gate-controlled linear magnetoresistance in thin Bi2Se3 sheets

Gao, B. F.
•
Gehring, P.
•
Burghard, M.  
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2012
Applied Physics Letters

We explore the emergence of linear magnetoresistance in thin Bi2Se3 sheets upon tuning the carrier density using a back gate. With increasingly negative gate voltage, a pronounced magnetoresistance of similar to 100% is observed, while the associated B-field dependence changes from quadratic to linear. Concomitantly, the resistance-versus-temperature curves evolve from metallic to semiconductor-like, and increasingly strong weak anti-localization behavior is manifested. Analysis of the magnetoresistance data reveals two contributions, namely from the bulk conduction band and from a state inside the bulk gap. The latter is responsible for the linear magnetoresistance and likely represents the topologically protected surface state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719196]

  • Details
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Type
research article
DOI
10.1063/1.4719196
Web of Science ID

WOS:000304489900039

Author(s)
Gao, B. F.
•
Gehring, P.
•
Burghard, M.  
•
Kern, K.  
Date Issued

2012

Publisher

AIP American Institute of Physics

Published in
Applied Physics Letters
Volume

100

Issue

21

Article Number

212402

Subjects

Single Dirac Cone

•

Topological-Insulator

•

Surface

•

Bi2Te3

•

Sb2Te3

•

Limit

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSEN  
Available on Infoscience
June 22, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/82067
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