Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.
Type
patent
EPO Family ID
45812813
Author(s)
Note
Alternative title(s) : (de) Halbleiterbauelement (fr) Dispositif semi-conducteur
TTO classification
TTO:6.1022
| Identifier | Country code | Kind code | Date issued |
US9608101 | US | B2 | 2017-03-28 |
US2014197459 | US | A1 | 2014-07-17 |
EP2661775 | EP | A1 | 2013-11-13 |
WO2012093360 | WO | A1 | 2012-07-12 |
Available on Infoscience
September 22, 2015
Use this identifier to reference this record