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conference paper
1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C
2009
2009 Ieee 21St International Conference On Indium Phosphide & Related Materials (Iprm)
10-Gb/s modulation speed up to 100 degrees C temperature is achieved with wafer-fused VCSELs incorporating re-grown tunnel junction and emitting more than 1-mW single mode power at the 1300-nm waveband in the full temperature range. (C) 2009 Optical Society of America
Type
conference paper
Web of Science ID
WOS:000270539400101
Author(s)
Date Issued
2009
Journal
2009 Ieee 21St International Conference On Indium Phosphide & Related Materials (Iprm)
Start page
375
End page
378
Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Newport Beach, CA | May 10-14, 2009 | |
Available on Infoscience
November 30, 2010
Use this identifier to reference this record