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conference paper

Scalable Gm/I Based MOSFET Model

Bucher, M.
•
Lallement, C.
•
Enz, C.  
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1997
Proc. of the Int. Semiconductor Device Research Symp.
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Type
conference paper
Author(s)
Bucher, M.
•
Lallement, C.
•
Enz, C.  
•
Theodoloz, F.
•
Krummenacher, F.
Date Issued

1997

Published in
Proc. of the Int. Semiconductor Device Research Symp.
Start page

615

End page

617

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSI2  
Available on Infoscience
June 24, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/51083
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