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2011
Local modification of GaAs nanowires induced by laser heating
research article
GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were performed on the same single GaAs nanowires in order to correlate their structural and optical properties. We show that the local changes of the nanowires act as a barrier for thermal transport which is of interest for thermoelectric applications.
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Name
Zardo-OxidationGaAs-Nanotech2011.pdf
Type
Publisher's Version
Access type
openaccess
Size
727.9 KB
Format
Adobe PDF
Checksum (MD5)
2d67a617a83ce878ea3412c4dc08e81e