The optical and electrical properties of Ru1-xTixO2 (0 <= x <= 0.13) thin films deposited by hybrid HiPIMS/DCMS process have been investigated as function of Ti content. The optical properties were studied by specular reflectivity and spectroscopic ellipsometry in the photon energy range 1.3-6.3 eV. The electrical resistivity was measured by the van der Pauw method in the temperature range from 20 K to 300 K and Hall effect was examined at 300 K. Pure RuO2 and Ru1-xTixO2 films with x <= 0.026 exhibit reflectivity and dielectric functions comparable to those of the RuO2 single crystals reported in the literature. For 0.062 <= x <= 0.13 important modifications in the optical and electrical properties of Ru1-xTixO2 films were noticed. The optical properties of the films are well described by the Drude-Lorentz model. The resistivity vs temperature variation of all the Ru1-xTixO2 thin films revealed a metallic behavior. Hall measurements indicated that these films are p-type conductors. The results are interpreted by considering the modifications of RuO2 band structure induced by the substitution of Ru4+ with Ti4+.