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research article

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes

Durand, Christophe
•
Carlin, Jean-Francois  
•
Bougerol, Catherine
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2017
Nano Letters

Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metalorganic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the growth of N-polar c-axis vertical GaN wires surrounded by a coreshell MQW heterostructure followed by in situ selective etching using controlled H-2/NH3 annealing at 1010 degrees C to remove the inner GaN wire part. After this process, well-defined MQW-based tubes having nonpolar m-plane orientation exhibit UV light near 330 nm up to room temperature, consistent with the emission of GaN/InAlN MQWs. Partially etched tubes reveal a quantum-dotlike signature originating from nanosized GaN residuals present inside the tubes. The possibility to fabricate in a simple way thin-wall III-N tubes composed of an embedded MQW-based active region offering controllable optical emission properties constitutes an important step forward to develop new nitride devices such as emitters, detectors or sensors based on tubelike nanostructures.

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Type
research article
DOI
10.1021/acs.nanolett.6b04852
Web of Science ID

WOS:000403631600004

Author(s)
Durand, Christophe
Carlin, Jean-Francois  
Bougerol, Catherine
Gayral, Bruno
Salomon, Damien
Barnes, Jean-Paul
Eymery, Joel
Butte, Raphael  
Grandjean, Nicolas  
Date Issued

2017

Publisher

Amer Chemical Soc

Published in
Nano Letters
Volume

17

Issue

6

Start page

3347

End page

3355

Subjects

Nanotubes

•

multiple quantum wells

•

nitride semiconductors

•

MOVPE

•

quantum dots

•

UV emission

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
LASPE  
Available on Infoscience
July 10, 2017
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/139014
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