Loading...
research article
AlGaN/GaN HEMT on (111) single crystalline diamond
2010
AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and f(max) cutoff frequencies of 21 and 42 GHz.
Type
research article
Web of Science ID
WOS:000274631400026
Authors
Publication date
2010
Published in
Volume
46
Issue
4
Start page
299
End page
300
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
October 5, 2010
Use this identifier to reference this record